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The MOSIS CMOS Submicron Technology |
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This technology has 4 metal layers, but can also be used for 3-metal processes by using the MOSIS CMOS Submicron: 3-Metal Rules subcommand of the Parametrize Technology command of the Technology menu.
By default, this technology describes a p-well process. However, it is possible to switch to an n-well process with the MOSIS CMOS Submicron: n-Well subcommand of the Parametrize Technology command of the Technology menu. This command switches layer usage and renames the transistors, contacts, and arcs so that an n-well technology is in effect.
Be warned that Electric always starts up with this as a p-well technology. Therefore, if you have switched to n-well and created a library, you must switch each time you rerun the system before reading that library. The best solution to this situation is to always use the default p-well version of the technology and only switch to n-well before chip fabrication.
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